Автори | M.V. Makarov |
Приналежність | Murom Institute of Vladimir State University, 23, Orlovskaya st., 602264 Murom, Russia |
Е-mail | |
Випуск | Том 8, Рік 2016, Номер 3 |
Дати | Одержано 22.04.2016, опубліковано online - 03.10.2016 |
Посилання | M.V. Makarov, J. Nano- Electron. Phys. 8 No3, 03035 (2016) |
DOI | 10.21272/jnep.8(3).03023 |
PACS Number(s) | 61.46. – w, 81.07. – b |
Ключові слова | Nanoscale electronics, Properties of nanomaterials, Memristors, Parallel computing (2) , Fault tolerance. |
Анотація | This article presents an approach to the practical analysis of nanomaterials which determine the reliability parameters of nanoscale electronic hardware components when they are used in developing fault-tolerant high-performance computing systems. We propose a methodology of theoretical and experimental study of the reliability values of the memristor models used as the synaptic connections of an artificial neural network that approximate a differential equation. |
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