Автори | Mirgender Kumar1, V.P. Singh2 |
Афіліація | 1 Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 India 2 Indian Institute of Technology, Kharagpur-721302 India |
Е-mail | mkumar.rs.ece@iitbhu.ac.in |
Випуск | Том 5, Рік 2013, Номер 3 |
Дати | Одержано 09.01.2013, у відредагованій формі - 02.07.2013, опубліковано online - 12.07.2013 |
Цитування | Mirgender Kumar, V.P. Singh, J. Nano- Electron. Phys. 5 No 3, 03006 (2013) |
DOI | |
PACS Number(s) | 73.40.Kp, 42.55.Pх |
Ключові слова | Photoreflectance spectroscopy, Surface photovoltaic spectroscopy, HRXRD (3) , Heterostructures (2) . |
Анотація | This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like quantum wells. The characterization was performed using photoreflectance spectroscopy, surface photovoltaic spectroscopy and X-ray diffraction. The experimental results are verified by numerical simulation. |
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