Автори | A.P. Kuzmenko1 , D.I. Timakov1 , P.V. Abakumov1 , M.B. Dobromyslov2 , L.V.Odnodvorets3 |
Афіліація | 1 South-West State University, 94, 50 Let Octyabtya Str., 305040 Kursk, Russia 2 Pacific National University, 136, Tihkhookeanskaya Str., 680035 Khabarovsk, Russia 3 Sumy State University, 2, Rymsky-Korsakov Str., 40007 Sumy, Ukraine |
Е-mail | apk3527@mail.ru |
Випуск | Том 5, Рік 2013, Номер 3 |
Дати | Одержано 22.05.2013, опубліковано online - 12.07.2013 |
Цитування | A.P. Kuzmenko, D.I. Timakov, P.V. Abakumov, et al., J. Nano- Electron. Phys. 5 No 3, 03024 (2013) |
DOI | |
PACS Number(s) | 42.65.Dr, 75.60.Ch |
Ключові слова | Raman scattering spectroscopy (2) , Silicon single-crystal, Flexural stresses, Mapping of Raman shift distributions (2) . |
Анотація | Flexural elastic deformations of single-crystal silicon with microspectral Raman scattering are studied. The investigation results are given on nano-scaled sign-changing shifts of the main peak of the microspec-tral Raman scattering within the single-crystal silicon cantilever beam under influence of flexural stress. The maximum value of Raman shift characteristic of silicon peak equal to 518 cm – 1, when elasticity still remains, amounted to 8 cm – 1. The qualitative explanation of increase in strength of the cantilever beam due to its small thickness (2 m) is provided, which is in accord with predictions of real-world physical pa-rameters that were obtained in software environment SolidWorks with the module SimulationXpress. |
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