Effect of Aluminum (Al: 0, 1, 2 and 3 wt.%) Doping on Electrical Properties of ZnO:Al/p-Si Heterojunction for Optoelectronic Applications

Authors M.A. Bouacheria1, A. Djelloul2 , L. Benharrat2, M. Adnane1

1LMESM, Département de Technologie des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf USTO-MB, BP 1505, El M'naouer, 31000 Oran Algérie

2Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’, 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, Algérie

Е-mail mohammedamine.bouacheria@univ-usto.dz
Issue Volume 16, Year 2024, Number 1
Dates Received 05 December 2023; revised manuscript received 18 February 2024; published online 28 February 2024
Citation M.A. Bouacheria, A. Djelloul, et al., J. Nano- Electron. Phys. 16 No 1, 01025 (2024)
DOI https://doi.org/10.21272/jnep.16(1).01025
PACS Number(s) 61.72.uf, 61.72.uf, 73.40.Kp, 81.15._z, 85.30.De, 85.60._q
Keywords Al-doped zinc oxide, Silicon (58) , Heterojunction (6) , Sol-gel (17) , Dip-coating, Electrical properties (19) , Optoelectronic applications.

In this paper, the electrical properties different diodes were reported. Pure and Al-doped ZnO thin films of different concentrations (Al: 1, 2 and 3 wt.%) were deposited by sol-gel dip-coating onto p-Si substrate to form heterojunctions. Zinc acetate dehydrate, Hexahydrate aluminum chloride, ethanol and ethanolamine were used as a starting material, doping, solvent and stabilizer, respectively. The dip-coating process with drying was repeated 6 times to obtain multilayer films. The morphological and electrical properties of the thin films as a function of Al concentration have been investigated using atomic force microscopy (AFM) and current-voltage (I-V) measurements at room temperature. AFM images revealed that grain sizes and surface roughness increase with increasing Al concentration. I-V characteristics of the diodes exhibited high and low currents under forward and reverse bias, respectively. The ideality factors (n), rectification ratio (RR) and barrier heights (BH) were found to range from 1.97 to 8.34, 0.84 to 5958 and 0.80 to 0.86 eV for different Al doping concentrations, respectively. These findings showed no monotonic behaviour of the calculated parameters with varying Al doping concentrations. The best electrical characteristic was obtained for the sample n-ZnO: 2 % Al/p-Si, with an ideality factor of 1.97 eV, reverse-saturation current of 1.69(10 – 8 A, rectification ratio of 5958 at ± 2 V, and barrier height of 0.85 eV.

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