Effect of Electron-Phonon Interaction on the Resistivity of Metal Films as Sensor Electronics Elements

Authors L.V. Odnodvorets , Yu.M. Shabelnyk , N.V. Maliovana, V.F. Nefedchenko, A.K. Rylova, I.Yu. Protsenko

Sumy State University, 40007 Sumy, Ukraine

Е-mail l.odnodvorets@aph.sumdu.edu.ua
Issue Volume 16, Year 2024, Number 1
Dates Received 15 January 2024; revised manuscript received 10 February 2024; published online 28 February 2024
Citation L.V. Odnodvorets, Yu.M. Shabelnyk, et al., J. Nano- Electron. Phys. 16 No 1, 01006 (2024)
DOI https://doi.org/10.21272/jnep.16(1).01006
PACS Number(s) 73.22. – f, 74.25.Fy, 74.25.Ha, 74.70.Ad
Keywords Single-layer metal films, Size effects, Debye temperature, Effect of electron-phonon interaction.

Modern technologies of electronics and sensor technic make it possible to obtain nanometer-thick film materials with unique properties that are not typical for the bulk state. It was experimentally obtained that the transition from bulk to film material leads to changes in its physical properties. The main reasons for this are related to: the different structure of materials; size effects that arise as a result of limiting the average length of the free path of electric current carriers by the outer surfaces of the film or the geometric dimensions of the crystallites; by changing the frequency and energy characteristics of the atoms of the crystal lattice under the influence of the temperature factor. Based on the temperature dependences of the resistivity of single-layer films of noble metals the features of high-temperature electron-phonon interaction were analyzed. We established that the angular coefficient of the linear section of the temperature dependences of the single-layer metal films resistivity increases with a decrease in their thickness. When the film thickness decreases, the average phonon energy increases, which leads to an increase in the efficiency of electron-phonon scattering and, as a consequence, an increase in resistivity.

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