Crystal Silicon Photoconductivity with Amorphous Inclusions

Authors Oksana Babychenko1, Olha Sushko2, Serhii Babychenko1, Volodymyr Logunov1, Hennadii Bendeberya1

1Kharkiv National University of Radio Electronic, Microelectronics, Electronic Devices and Appliences Department, Kharkiv, Ukraine

2Kharkiv National University of Radio Electronic, Biomedical Engineering Department, Kharkiv, Ukraine

Issue Volume 16, Year 2024, Number 1
Dates Received 18 December 2023; revised manuscript received 12 February 2024; published online 28 February 2024
Citation Oksana Babychenko1, Olha Sushko, et al., J. Nano- electron. Phys. 16 No 1, 01013 (2024)
PACS Number(s) 73.50.Pz, 78.66.Jg
Keywords Photoconductivity (3) , Amorphous silicon (7) , Disorder (2) , Solar cell (51) , Microwave cavity.

The results of the numerical-analytical modeling of the photoconductivity of crystalline silicon with the inclusion of amorphous silicon are presented. These ones can be used in studying the principles of a new class of photovoltaic converters based on modified semiconductor materials. The initial data for such a model should be experimentally obtained layer parameters. During the calculations, it was assumed that the change in photoconductivity is caused by a change in the degree of disorder of amorphous inclusions. It was assumed that the semiconductor structure is dominated by cylindrical inclusions and the degree of sample disorder γ varies in the range from 0.040 to 0.065. That is, approximately 5 % of amorphous inclusions in the volume of the crystalline structure. The paper presents the results of calculations of changes in photoconductivity depending on the degree of disorder of the semiconductor structure. The results are in good agreement with obtained experimental data on amorphous-crystalline structures formed as a result of irradiation by (-quanta. The photoconductivity of semiconductor samples irradiated with gamma rays was studied by microwave photomodulation methods using a resonator measuring transducer.

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