Comparison of Structural and Optical Properties of CdSe Films Grown by CSD and CBD Methods

Authors M.A. Sozanskyi , P.Yo. Shapoval , T.B. Gnativ, R.R. Guminilovych, V.E. Stadnik , M.M. Laruk
Affiliations

Lviv Polytechnic National University, 12, S. Bandera St., 79013 Lviv, Ukraine

Е-mail martyn.a.sozanskyi@lpnu.ua
Issue Volume 14, Year 2022, Number 5
Dates Received 09 September 2022; revised manuscript received 19 October 2022; published online 28 October 2022
Citation M.A. Sozanskyi, P.Yo. Shapoval, T.B. Gnativ, et al., J. Nano- Electron. Phys. 14 No 5, 05026 (2022)
DOI https://doi.org/10.21272/jnep.14(5).05026
PACS Number(s) 81.15.Lm, 78.66.Hf
Keywords Cadmium selenide, Semiconductor films, Chemical deposition (3) , XRD (78) , Optical band gap (7) .
Annotation

Cadmium selenide (CdSe) films were synthesized on glass substrates via chemical surface deposition (CSD) and chemical bath deposition (CBD) methods. Aqueous solutions of cadmium chloride, thiourea, sodium selenosulfate, trisodium citrate and ammonia hydroxide were used. Theoretical calculations of the boundary conditions for the formation of cadmium selenide and cadmium hydroxide were carried out in the cadmium-selenosulfate and cadmium-selenosulfate-citrate-ammonia systems. The phase composition, optical transmission spectra and surface morphology of deposited CdSe films were investigated. According to the X-ray analysis, the film samples are single phase and consist of CdSe compound in its typical cubic modification. The film surface is solid, smooth and has a small number of surface defects. The optical transmission of CdSe films increases in the investigated wavelength area from 340 to 900 nm. The transmission curves have bends in the 650 nm region, which is typical for cadmium selenide. The optical band gap values of CdSe films are found to be in the range of 1.82-1.88 eV.

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