Microdefects and Electrical Properties of β-Ga2O3 and β-Ga2O3:Mg Crystals Grown by Floating Zone Technique

Authors V. Vasyltsiv , L. Kostyk , O. Tsvetkova , M. Kushlyk, D. Slobodzyan, R. Diduk, B. Pavlyk , A. Luchechko

Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnanavskogo St., 79017 Lviv, Ukraine

Е-mail andriy.luchechko@lnu.edu.ua
Issue Volume 14, Year 2022, Number 5
Dates Received 10 August 2022; revised manuscript received 22 October 2022; published online 28 October 2022
Citation V. Vasyltsiv, L. Kostyk, O. Tsvetkova, и др., J. Nano- Electron. Phys. 14 No 5, 05005 (2022)
DOI https://doi.org/10.21272/jnep.14(5).05005
PACS Number(s) 61.72.Qq, 72.20. – i
Keywords β-Ga2O3 and β-Ga2O3:Mg single crystals, Microdefects, Conductivity (43) , Charge carrier concentration, Activation energy (7) .

Microdefects in β-Ga2O3 and β-Ga2O3:0.1 % Mg single crystals grown by the method of floating zone technique with radiation heating have been studied. Porous defects with a tube-like shape were found on the (100) surface and in the bulk of undoped β-Ga2O3 crystals. Such defects are up to 1 µm in diameter and up to 100 (m in length, elongated along the [010] axis. Doping of gallium oxide with magnesium ions leads to a decrease in the concentration of defects and changes in their shape. The concentration and mobility of electrical charge carriers in undoped β-Ga2O3 crystals were calculated. The activation energies of the conductivity of the studied crystals were estimated. Some correlations between crystal growing conditions, doping, and the rate of Ga2O evaporation from the melt and defect density were revealed and discussed, providing aspects for further material development. The mechanisms of these defects formation have been also analyzed.

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