Super-Hydrophobic F-Doped SnO2 (FTO) Nanoflowers Deposited by Spray Pyrolysis Process for Solar Cell Applications

Authors Noubeil Guermat1 , Warda Darenfad2, Kamel Mirouh2, Mehdi Kalfallah1, Mehdi Ghoumazi3

1Department of Electronics, Faculty of Technology, University Mohamed Boudiaf of M’sila, 28000 M’sila, Algeria

2Thin Films and Interfaces Laboratory (LCMI), University of Constantine 1, 25000 Constantine, Algeria

3Research Unit in Optics and Photonics (UROP), Center for the Development of Advanced Technologies (CDTA), University of Setif-1, 19000 Setif, Algeria

Issue Volume 14, Year 2022, Number 5
Dates Received 16 May 2022; revised manuscript received 19 October 2022; published online 28 October 2022
Citation Noubeil Guermat, Warda Darenfad, Kamel Mirouh, et al., J. Nano- Electron. Phys. 14 No 5, 05013 (2022)
PACS Number(s) 82.30.Lp
Keywords Thin films (60) , F-doped SnO2, Spray pyrolysis (9) , Contact angle, Super-hydrophobic.

Polycrystalline films of undoped and fluorine-doped SnO2 (FTO) are deposited on a glass substrate by spray pyrolysis at 400 °C. The effects of fluor concentration (8, 10 and 12 %) on the structural, morphological, optical and electrical properties of FTO films are studied. Our XRD results show that F-SnO2 still has the same rutile structure as undoped SnO2 with improved crystallization for doped films, with no other phase detected. The measured contact angles are < 90° for undoped and 8 % F doped films, which confirms the hydrophilic character, while other doped (SnO2:10 % F and SnO2:12 % F) films show the hydrophobic character at contact angle values of > 90° and the super-hydrophobic (CA = 140°) for SnO2:12 % F thin film. A higher transmittance value of 83 %, a wide band gap equal to 3.9 eV, and lower disorder (287.68 meV) are observed for the 12 % F doped SnO2 film. In addition, electrical resistivity (ρ), carrier concentration (n) and Hall mobility (μ) are determined from Hall effect measurements and it is found that all the elaborated thin films have n-type conductivity. The lowest resistivity of 2.245 x 10 – 4 Ωxcm and the highest Hall mobility of 24.55 cm2xV – 1xs – 1 are obtained at an F concentration of 12 %. The results suggest that the FTO film at 12 %F can be used as a transparent conductive oxide of the front electrode for film solar cells.

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