Study of Mono- and Polycrystalline Silicon Solar Cells with Various Shapes for Photovoltaic Devices in 3D Format: Experiment and Simulation

Authors J. Gulomov, R. Aliev, N. Mirzaalimov, B. Rashidov, J. Alieva
Affiliations

Andijan State University, 129, Universitet St., 170100 Andijan, Uzbekistan

Е-mail jasurbekgulomov@yahoo.com
Issue Volume 14, Year 2022, Number 5
Dates Received 03 August 2022; revised manuscript received 22 October 2022; published online 28 October 2022
Citation J. Gulomov, R. Aliev, N. Mirzaalimov, et al., J. Nano- Electron. Phys. 14 No 5, 05012 (2022)
DOI https://doi.org/10.21272/jnep.14(5).05012
PACS Number(s) 85.60.Bt, 78.20.Bh, 84.60.Jt
Keywords Monocrystal, Polycrystal (2) , Silicon (58) , Solar cell (51) , Photovoltaic device, Simulation (34) , Shape (7) .
Annotation

When the temperature increases, the efficiency of solar cells decreases, so the construction and design of photovoltaic devices with a cooling system from solar cells instead of solar panels is one of the most important tasks today. Therefore, in this scientific work, various forms of photoelectric devices in 3D format that can cool themselves by rotating around their own axis were studied. In these devices, mainly triangular and rectangular solar cells are used, so the effect of the cross-sectional shape on the photoelectric parameters of monocrystalline and polycrystalline silicon-based solar cells has been studied experimentally and with simulation. The results showed that polycrystalline silicon-based solar cells can be cut rectangular and used in the manufacture of prism-shaped photovoltaic devices, as well as monocrystalline silicon-based solar cells can be used in triangular cutting and in the manufacture of pyramid-shaped photovoltaic devices. Based on these results, a hexagonal prism-shaped photoelectric device made of a rectangular polycrystalline silicon-based solar cell was studied experimentally. The surface temperature of the device was 50 C without rotation and the open circuit voltage was 13.12 V. In the range of 0-6 rad/s of rotation speed, the open circuit voltage of the device increased sharply by 0.36 V and the surface temperature decreased by 9.4 C.

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