Deep Silicon Barrier Structure as Chemical Sensor for Detection of Hydrochloric Acid Salt Solutions

Authors А.V. Kozinets1, 3 , A.I. Manilov1, S.A. Alekseev2, S.V. Litvinenko1, V.V. Lysenko4, V.A. Skryshevsky1

1Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64, Volodymyrska St., 01033 Kyiv, Ukraine

2Chemical Faculty, Taras Shevchenko National University of Kyiv, 64, Volodymyrska St., 01033 Kyiv, Ukraine

3Corporation Science Park Taras Shevchenko University of Kyiv, Volodymyrska St., 60, 01033 Kyiv, Ukraine

4Light-Matter Institute (ILM), UMR CNRS 5306, University of Lyon (UCBL), 69622 Lyon, France

Issue Volume 12, Year 2020, Number 3
Dates Received 18 January 2020; revised manuscript received 15 June 2020; published online 25 June 2020
Citation А.V. Kozinets, A.I. Manilov, S.A. Alekseev, et al., J. Nano- Electron. Phys. 12 No 3, 03015 (2020)
PACS Number(s) 68.08.p, 82.47.Rs, 81.07.De
Keywords Chemical sensor, Photocurrent (2) , Surface recombination, Deep silicon barrier structure.

The possibility of the detection of hydrochloric acid salts by silicon sensory structures with photovoltaic principle of transformation has been considered in this work. The proposed structures realize transducer principle that differs from the well-known conventional LAPS (light-addressable potentiometric sensors). The basis of such devices is a “deep” barrier silicon structure. In the proposed scheme, the sensor signal is the photocurrent through the barrier structure induced by light in the range of high absorption. It allows receiving maximum changes of photocurrent due to changes of recombination rate on working surface. It should be noted that the proposed structure allows simpler technical realization than conventional LAPS. Several analytes (chlorides), containing different metals with various relative electronegativity (Fe, Zn and Al), were experimentally investigated. It has been experimentally shown that dependences of photocurrent on polarization voltage (the voltage that changes the surface band bending) is very informative for the detection of such analytes. Within the framework of the Stevenson-Keyes model, the obtained results can be explained qualitatively. The principal reason allowing the detection is the influence of the local electrostatic field of adsorbed ions on the recombination parameters of the silicon surface.

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