Physical Features of Double Sided Diffusion of Lithium into Silicon for Large Size Detectors

Authors R.A. Muminov1 , A.K. Saymbetov2 , N.M. Japashov2 , Yo.K. Toshmurodov1, S.A. Radzhapov1 , N.B. Kuttybay2, M.K. Nurgaliyev2
Affiliations

1Physico-Technical Institute of the Academy of Sciences of Uzbekistan, Tashkent 100084, Uzbekistan

2Al-Farabi Kazakh National University, Almaty 050000, Kazakhstan

Е-mail [email protected]
Issue Volume 11, Year 2019, Number 2
Dates Received 26 December 2018; revised manuscript received 03 April 2019; published online 15 April 2019
Citation R.A. Muminov, A.K. Saymbetov, N.M. Japashov, и др., J. Nano- Electron. Phys. 11 No 2, 02031 (2019)
DOI https://doi.org/10.21272/jnep.11(2).02031
PACS Number(s) 6170T, 6610C, 7630D
Keywords Si(Li) detectors, Li diffusion, Double sided diffusion.
Annotation

In this paper, we propose a new method for double sided diffusion of lithium ions into a monocrystalline silicon wafer for the further fabrication of Si (Li) p-i-n nuclear radiation detectors with a diameter of the sensitive surface of more than 110 mm and a thickness of the sensitive region of more than 4 mm. It was found that the optimal regime for lithium diffusion into large-diameter silicon is at a temperatureof T = (450 ± 20) ºC, time t = 3 min, thickness hLi = (300 ± 10) mm. The theoretical assumptions and experimental characteristics of double sided diffusion are considered. As initial material the dislocation free monocrystalline cylindrical silicon crystal of the p-type, obtained by the floating-zone method (with a diameter 110 mm, thickness 8-10 mm, resistivity  ρ = 1000 ÷ 10000 Ohm·cm and life time τ ≥ 500 μs) and the silicon crystal of the p-type (with a diameter of 110 mm, resistivity  ρ = 10 ÷ 12 Ohm·cm, lifetime τ ≥ 50 μs, grown in an argon atmosphere) obtained by the Czochralski method were used. Correspondingly, the technological processes of mechanical and chemical processing of semiconductor wafers based on silicon of a large area have been improved.

List of References