X-ray Investigation of SiC Nanostructure on Cu Films

This article presents the X-ray investigation results of the silicon carbide nanostructures which were synthesized by the method of Microwave Enhanced Chemical Vapor Deposition (MWCVD). The copper films deposited by the method of magnetron sputtering were used as catalysts. The experiments were performed at different temperatures from 600 to 900°C (in 100°C increments). SEM studies of the samples showed that the nanostructures have a diameter of 180-400nm and a length from 670 nm to 1.5 microns. It is also seen from SEM studies that synthesized nanostructures have a rough surface. Analysis of the results of experiments on the synthesis of silicon carbide nanostructures using the MWCVD method shows that the growth of nanostructures starts from 700 °C. It should be emphasized that the intensity of the SiC peak increases with increasing synthesis temperature. Moreover, with increasing synthesis temperature it can be noticed that the next reflection peaks characteristic of silicon carbide appear. The results of X-ray analysis showed that samples grown at a temperature of 900 °C have the highest crystallinity. The results of research using the methods of SEM and X-ray demonstrated that, in the course of experiments, in addition to silicon carbide nanostructures, various carbon formations were obtained. Thus, at a temperature of 600 °C, amorphous carbon films are formed, while at 700 °C nanostructures of silicon carbide are formed.