The Structural-Phase State and Diffusion Process in Film Structures Based on Co and Ru

Authors I.V. Cheshko1, A.M. Lohvynov1, A.I. Saltykova2 , S.I. Protsenko1

1Sumy State University, 2, Rimsky-Korsakov Str., 40007 Sumy, Ukraine

2Sumy State Pedagogical University named after A.S. Makarenko, 87, Romens’ka Str., 40002 Sumy, Ukraine

Issue Volume 10, Year 2018, Number 6
Dates Received 15 August 2018; revised manuscript received 04 December 2018; published online 18 December 2018
Citation I.V. Cheshko, A.M. Lohvynov, A.I. Saltykova, S.I. Protsenko, J. Nano- Electron. Phys. 10 No 6, 06016 (2018)
PACS Number(s) 05.70. – a, 61.72.Mm, 61.72.Lk, 62.20.F –, 64.10. + h, 64.60.My, 68.35.Md, 83.10. – y
Keywords Thin film (101) , Synthetic antiferromagnetic layer, Crystal structure (8) , Phase composition (3) , Diffusion (11) , Secondary ion mass spectrometry.

Investigation results of crystalline structure, phase composition and diffusion processes in film systems based on Co and Ru in the thickness range 5÷60 nm before and after annealing to temperature 600 К are represented. It was shown that the film system Co / Ru / S and Co / Ru / Со / S consist of a phase hcp-Co and hcp-Ru. Film systems consisting of Ru layers before and after annealing have a nanodispersed crystalline texture. The average size of crystallites samples before annealing does not exceed 3÷5 nm, after annealing the maximum average size was 16 nm for samples with layer thicknesses 60 nm. The results of the study of the diffusion process of two-layer film systems Co / Ru / in different thickness ranges showed that before and after annealing the relative individuality of separate layers is preserved since the calculated values of  thermal diffusion effective coefficients for relatively thin and thick films lie in the range from 0.1 to 1.1 × 10 – 19 m2 / sec.

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