Estimation of the Relative Energy of Grain Boundaries in Silicon Films by the Grain Boundary Grooves Method

Authors T.V. Rodionova1, P.M. Lytvyn2
Affiliations

1Taras Shevchenko National University of Kyiv, 64, Volodymyrska Str., 01601 Kyiv, Ukraine

2Institute of Semiconductor Physics of NASU, 41, Nauky Prosp., 03028 Kyiv, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 6
Dates Received 16 August 2018; revised manuscript received 29 November 2018; published online 18 December 2018
Citation T.V. Rodionova, P.M. Lytvyn, J. Nano- Electron. Phys. 10 No 6, 06040 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06040
PACS Number(s) 68.35._p, 68.37.Ps
Keywords Silicon films, Dihedral angles, Relative grain-boundary energy, Atomic force microscopy (9) .
Annotation

The relative grain-boundary energy of undoped and phosphorus-doped silicon films with equiaxed, dendritic and fibrous structure, prepared by low-pressure chemical vapor deposition, was determined by the method of grain boundary grooves being formed at the intersection of the grain boundary plane with the free surface. The measurements of grain boundary groove dihedral angles were performed by atomic force microscopy. It was shown that undoped films with a fibrous structure possess the lowest relative grain-boundary energy; the largest relative energy was observed in fibrous structure. High grain boundary energy in fibrous type structure can be due to the presence in these films of a large number of high-order twin boundaries (Σ3, Σ9, Σ27, and so on) having high energy. Doping with phosphorus leads to increased grain boundary energy in films with dendritic structure, which may be due to segregation of phosphorus on the boundaries of grains.

List of References

English version of article