Indium Nanoparticle Enhanced Light Trapping in Thin Film Silicon Solar Cells

Authors Hasan Khaled Rouf, Jewel Dey

Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong-4331, Bangladesh

Issue Volume 10, Year 2018, Number 6
Dates Received 20 August 2018; revised manuscript received 30 November 2018; published online 18 December 2018
Citation Hasan Khaled Rouf, Jewel Dey, J. Nano- Electron. Phys. 10 No 6, 06008 (2018)
PACS Number(s) 78.20. – e, 78.66. – w, 42.79.Wc, 02.70. – c
Keywords Thin film solar cell (2) , Light trapping (4) , Plasmonics, Antireflection coating (3) , FDTD method.

Plasmonic nanoparticles can be engineered to achieve light trapping and get the full potential of thin film solar cells. This paper presents indium (In) nanoparticle based plasmon enhanced light trapping mechanism for thin film silicon solar cells. With the light trapping at the front, at the rear or at both surfaces of the solar cell along with a thin silicon nitride (Si3N4) antireflection coating, surface transmittance, reflectance and absorption enhancement of incident light were studied. In all the cases indium nanoparticle based light trapping resulted in more light absorption implying more photocurrent generation but the geometry and position of the nanoparticles determine the scattering and coupling properties. Therefore, optimization of indium nanoparticle diameter and inter-particle spacing was performed. Compared to more commonly used (but highly expensive) gold nanoparticles, indium nanoparticles based light trapping performed well in every aspect. These demonstrate the suitability of indium nanoparticles for light trapping in the thin film silicon solar cells, particularly in deep ultraviolet (UV) and near visible regions.

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