Modeling of Spin Valves of Magnetoresistive Fast-Acting Memory

Authors R.L. Politanskyi1, L.F. Politanskyi1, I.I. Grygorchak2, A.D. Veriga1
Affiliations

1Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynvky Str., 58012 Chernivtsi, Ukraine

2Lviv Polytechnic National University, 12, S. Bandera Str., 79013 Lviv, Ukraine

Е-mail r.politansky@chnu.edu.ua
Issue Volume 10, Year 2018, Number 6
Dates Received 03 August 2018, revised manuscript received 29 November 2018; published online 18 December 2018
Citation R.L. Politanskyi, L.F. Politanskyi, I.I. Grygorchak, A.D. Veriga, J. Nano- Electron. Phys. 10 No 6, 06027 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06027
PACS Number(s) 85.75.Bb, 75.47.De
Keywords MRAM (2) , Spin-valve structure (2) , Spin polarized current.
Annotation

In this paper, an analysis is made of the physical processes that occur in the spinvalve structures during the recording or reading of bits in high-speed magnetic memory devices using the phenomenon of moment transfer by spin-polarized current. Mathematical models of the phenomenon of magnetic resistance for magnetite / non-magnetic metal / magnet structures and phenomena that occur when the free layer is reversed under the influence of a spin-polarized current are presented. The analysis of the effect on the magnetoresistive effect of the spin-valve structure of the ratio of the thickness of the free and fixed layers are provided. The effect on the magnetoresistive effect in the spin-valve structure of the ratio of the thickness of ferromagnetic layers with small and large coercive forces (free and fixed layer) is investigated. It is shown that for high values of the polarization coefficient, the increase in the thickness of the fixed layer results in an undesired decrease in the magnetoresistive effect.

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