Modeling of Nanotransistors: Device of MOSFET

Authors Yu.A. Kruglyak1, P.O. Kondratenko2, Yu.M. Lopatkin3

1Odessa State Environmental University, Lviv Str., 65016 Odessa, Ukraine

2National Aviation University, 1, Komarov Ave., 03058 Kyiv, Ukraine

3Sumy State University, 2, Rymskiy-Korsakov Str., 40007 Sumy, Ukraine

Issue Volume 10, Year 2018, Number 6
Dates Received 01 October 2018; revised manuscript received 07 December 2018; published online 18 December 2018
Citation Yu.A. Kruglyak, P.O. Kondratenko, Yu.M. Lopatkin, J. Nano- Electron. Phys. 10 No 6, 06034 (2018)
PACS Number(s) 72.80.Ey, 85.30. − z, 85.30.De, 85.30.Tv, 85.40. − e
Keywords Nanoelectronics (3) , Field effect transistor, Current-voltage characteristics (3) .

It is offered a review, which consists of several parts on the subject and whose task is to discuss the physical models and principles underlying the functioning of nanoscale MOSFETs(Metal-Oxide-Semiconductor Field-Effect Transistor) and based both on the traditional «top – down» approach and on a more modern approach originating in the works of Rolf Landauer who proposed the model of an elastic resistor long before its experimental confirmation in nanoconductors, as well as of Suprio Datta and Mark Lundstrom, who rethought this model and gave it the current sound and proved its applicability to electronic devices as nanoscopic, and micro- and macroscopic with arbitrary dimensions of 1D, 2D and 3D and operating in ballistic, quasi-ballistic and diffusion modes. The first part is devoted to the physical structure and current-voltage characteristics of MOSFET.

List of References

English version of article