Study of the Structural and Optical Properties of Dy Doped CdS Thin Films Deposited by Close-spaced Vacuum SublimationCdSDy

Authors Yu.P. Gnatenko1, Yu.S. Yeromenko2, D.I. Kurbatov2, P.M. Bukivskij1, M.S. Furier1, A.P. Bukivskii1, A.S. Opanasyuk2       

1Institute of Physics of National Academy of Sciences of Ukraine, 46, Nauki Prosp., 03028 Kyiv, Ukraine

2Sumy State University, 2, Rymskyi-Korsakov Str., 4007 Sumy, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 5
Dates Received 26 August 2018; revised manuscript received 20 October 2018; published online 29 October 2018
Citation Yu.P. Gnatenko, Yu.S. Yeromenko, D.I. Kurbatov, et al., J. Nano- Electron. Phys. 10 No 5, 05001 (2018)
PACS Number(s) 85.60.Bt, 73.61.Ga
Keywords Semiconductor thin films, Structural properties (9) , Low-temperature photoluminescence, Intrinsic defects.

In this work we deposited CdS:Dy thin films using a close-spaced vacuum sublimation method at different temperatures (Ts) of the glass substrate. The XRD analysis reveals that the obtained films only correspond to a single wurtzite phase. The microstress level in Dy doped CdS films decreases compared with undoped films. The results of the pole density calculations show that at Ts  (573-673) K the [002] crystallographic direction corresponds to the main axial growth texture. The intrinsic defects in the investigated films were studied based on the low temperature photoluminescence measurements. It was shown that the CdS:Dy thin films are sufficiently stoichiometric. Analysis of the free exciton reflection spectra indicates that the polarization of the bands corresponds to the optical c-axis perpendicular to the substrate surface. The optical transmittance of CdS:Dy thin films in the range of transparency (600-800 nm) at room temperature exceeded 80 %. Based on the obtained results, it is concluded that the CdS:Dy thin films are excellent crystalline and optical quality and may be increase the efficiency their photovoltaic applications.

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