Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers

Authors Benslimane Hassane, Dennai Benmoussa
Affiliations

Physics and Semiconductors Devices Laboratory, Materials Science Departement, Tahri Mohammed University, BP. 417, Bechar, Algeria

Е-mail hassane_ben@yahoo.fr
Issue Volume 10, Year 2018, Number 5
Dates Received 22 July 2018; revised manuscript received 24 October 2018; published online 29 October 2018
Citation Benslimane Hassane, Dennai Benmoussa, J. Nano- Electron. Phys. 10 No 5, 05044 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05044
PACS Number(s) 84.60.Jt
Keywords Solar cell (51) , CIGS (9) , Buffer layer (2) , Efficiency (24) , AMPS-1D (10) .
Annotation

This study investigates the interplay between the absorber layer of Cu(In,Ga)Se2 solar cells and the buffer layer of these devices. Cu(In,Ga)Se2 devices with absorbers of different thicknesses and different buffer layers are simulated. We found that the reduction in thickness of the CIGS cell leads to decrease short-circuit current, it is the main cause of degradation photovoltaic conversion efficiency. It has been found that substitution of the CdS buffer layer by other materials such as ZnS can limit this performance degradation.

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