Boosting CZTSSe Solar Cell Efficiency by Back Surface Field Layer

Authors Abd Elhalim Benzetta1, Mahfoud Abderrezek2, Mohammed Elamine Djeghlal3

1Laboratoire Génie des Matériaux, Ecole Militaire Polytechnique, BP 17, Bordj El-Bahri, Alger, Algerie

2Unité de Développement des Equipements Solaires, UDES, Centre de Développement des Energies Renouvelables, CDER, 42415,Tipaza, Algérie

3Laboratoire de Sciences et Génie des Matériaux, Ecole Nationale Polytechnique, 10, Avenue Hassen Badi,BP 182, El-Harrach, Alger, Algérie

Issue Volume 10, Year 2018, Number 5
Dates Received 24 July 2018; revised manuscript received 20 October 2018; published online 29 October 2018
Citation Abd Elhalim Benzetta, Mahfoud Abderrezek, Mohammed Elamine Djeghlal, J. Nano- Electron. Phys. 10 No 5, 05035 (2018)
PACS Number(s) 88.40.H −
Keywords BSF, CZTSSe, Solar cell (49) , SCAPS-1D (5) , Thin film (101) .

In this work, a simulation of the CZTSSe (Cu2ZnSn(S,Se)4) solar cell with Al/ZnO:Al/ZnO(i)/CdS/ CZTSSe/Mo structure have been studied using the SCAPS-1D (Solar Cell Capacitance  Simulator  in  one Dimension). The simulation results have been validated with real experimental results. Next, a novel structure is proposed in which a back surface field (BSF) layer is inserted in order to boost the solar cell performance, a CZTSSe layer has been used as (BSF) layer. The efficiency of CZTSSe solar cell increases from 12.3 % to 15.3 % by inserting a BSF layer. Finally, an optimization of different physical parameters (Thickness and doping concentration) of BSF layer has been done, and the optimum values are determined. In this research work, the proposed structure of CZTSSe solar cells with optimum parameters showed higher functional properties, The maximum value of efficiency achieved was 16.98 % with Jsc = 36.31 mA/cm2, Voc = 0.69 V, and FF = 69.60% under 1.5G AM  illumination.

List of References