Magnetron Sputtered Al-ZnO Thin Films for Photovoltaic Applications

Authors J.R. Ray1 , M.S. Desai1 , C.J. Panchal1 , P.B. Patel2

1 Applied Physics Department, M.S. University of Baroda, 390001, Vadodara, India

2 Department of electronics, Sardar Patel University, 388120, Vallabh Vidyanagar, India

Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, in final form 14 October 2011, published online 17 October 2011
Citation J.R. Ray, M.S. Desai, C.J. Panchal, P.B. Patel, J. Nano- Electron. Phys. 3 No1, 755 (2011)
PACS Number(s) 81.15.Cd, 73.61.Le, 61.05.Cp, 78.20.Ci, 68.37.Ps
Keywords RF magnetron sputtering (5) , Al-ZnO thin film, Structural (40) , Optical (70) , Electrical (47) , Morphological characterization.
The optimization process of the RF magnetron sputtered Al − doped ZnO (AZO) thin films was carried out by studying its structural, optical, electrical, and morphological properties at different RF power and different working pressures for its use as a front-contact for the copper indium diselenide (CIS) based thin film solar cell. The structural study suggests that the preferred orientation of grains along the ( /002) plane having a hexagonal structure of the grains. The optical and electrical properties suggest that the films show an average transmission of 85 % and a resistivity of the order of 10-4 Ωcm. The morphology analysis suggests the formation of packed grains having a homogeneous surface.

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