Authors | G.G. Bhatt1, Vipul Kheraj2, M.S. Desai1 , C.J. Panchal1 |
Affiliations | 1 Applied Physics Department, Faculty of Tech. & Engg., The M. S. University of Baroda, Vadodara (Gujarat), India 2 Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat, India |
Е-mail | cjpanchal_msu@yahoo.com |
Issue | Volume 3, Year 2011, Number 1, Part 4 |
Dates | Received 04 February 2011, in final form 13 October 2011, published online 17 October 2011 |
Citation | G.G. Bhatt, Vipul Kheraj, M.S. Desai, C.J. Panchal, J. Nano- Electron. Phys. 3 No1, 721 (2011) |
DOI | |
PACS Number(s) | 68.65.Ac, 78.20.Ci |
Keywords | Thin film (101) , Multilayers (4) , In-situ, Reflectivity (3) , Simulation (35) . |
Annotation |
We have optimized and automated the experimental in-situ reflectivity measurement system for the laser diode (LD) facet coating. We have also developed a reflectivity-simulator program that gives the reflectivity data as a function of the thickness of the film (single or multi-layer) for a given wavelength, which aids in optimizing the above parameters while monitoring the coating of the films in-situ. We report the results for the in-situ reflectivity of a single layer MgF2 and a quarter-wave optical thick three bi-layer pairs of MgF2 and silicon on GaAs as a substrate for both the cases. We have achieved up to 83 % experimental reflectivity for the latter case. |
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