Inter-Electrode Separation Induced Amorphous-to-Nanocrystalline Transition of Hydrogenated Silicon Prepared by Capacitively Coupled RF PE-CVD Technique

Authors A.M. Funde1 , V.S. Waman1 , M.M. Kamble1 , M.R. Pramod1 , V.G. Sathe2 , S.W. Gosavi3 , S.R. Jadkar3

1 School of Energy Studies, University of Pune, Pune 411 007, India

2 UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India

3 Department of Physics, University of Pune, Pune 411 007, India

Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, in final form 13 October 2011, published online 17 October 2011
Citation A.M. Funde, V.S. Waman, M.M. Kamble, M.R. Pramod, V.G. Sathe, S.W. Gosavi, S.R. Jadkar, J. Nano- Electron. Phys. 3 No1, 651 (2011)
PACS Number(s) 81.15.Gh, 87.15.Pc, 61.05.cp, 03.75.Hh
Keywords Interelectrode separation, PE-CVD, Hydrogenated nanocrystalline silicon (2) , Amorphous-to-nanocrystalline transition, FTIR spectroscopy, Raman spectroscopy (18) .
Role of inter-electrode spacing in capacitively coupled radio frequency plasma enhanced chemical vapor deposition deposition (PE-CVD) system was studied. The influence of inter-electrode separation on the structural, optical and electrical properties of the deposited films was carefully invesigated keeping all other deposition parameters constant. The results indicate that the film growth rate critically depends up on the plasma chemistry/gas phase chemistry altered by variation of inter-electrode separation. Structure and optical properties are strongly influenced by inter-electrode separation. The nanocrystallization in the material was observed for smaller inter-electrode separation, whereas higher inter-electrode separation favors amorphous structure of the deposited material. The band gap of the material was found to decrease from ~2 eV to 1.8 eV when inter-electrode separation was varied from 15 mm to 40 mm.

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