Investigation of High-K Gate Dielectrics and Chirality on the Performance of Nanoscale CNTFET
| Authors | L. Renuka Devi1, N. Arumugam1 , J.E. Jayanthi1, T.S. Arun Samuel1 , T. Ananth Kumar2 |
| Affiliations |
1Department of ECE, National Engineering College, Kovilpatti, India 2Department of ECE, IFET College of Engineering, Villupuram, India |
| Е-mail | ramyalingaraj9715@gmail.com |
| Issue | Volume 13, Year 2021, Number 2 |
| Dates | Received 12 February 2021; revised manuscript received 15 April 2021; published online 20 April 2021 |
| Citation | L. Renuka Devi, N. Arumugam, et al., J. Nano- Electron. Phys. 13 No 2, 02026 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(2).02026 |
| PACS Number(s) | 61.48.De, 61.46. + w |
| Keywords | CNTFET (9) , Planar, Coaxial, Chirality. |
| Annotation |
Carbon nanotube field-effect transistors (CNTFETs) offer peculiar properties such as ultrahigh thermal conductivity, ballistic transport, highest current density, and extremely high mechanical strength. Because of these remarkable characteristics, they were anticipated to be used as cable materials and as an alternative channel material to extend the performance of complementary metal-oxide-semiconductor (CMOS) devices. In this paper, the planar and coaxial geometries with different chirality value are discussed, various parameters are analyzed with different dielectric materials like SiO2, HfO2, and Y2O3 to improve Ion current as well as subthreshold swing. This enhanced the device performances such as operation voltage, Ion/Ioff, density/diameter, potential/diameter, and energy/DOS ratios. This approach provides a useful and integrative method for manufacturing electronic devices from nanoscale electronic materials. |
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List of References |
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