Micro-Raman and UV-Vis Studies of 100 MEv Ni4+ Irradiated Cadmium Telluride Thin Films
| Authors | Neelam Pahwa1,2, A.D. Yadav1, S.K. Dubey1, A.P. Patel1 |
| Affiliations | 1 Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai-400 098, India 2 Zakir Husain College, Department of Electronics, University of Delhi, J.L.N. Marg, New Delhi |
| Е-mail | neelam.zhc@gmail.com |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, published online 08 May 2011 |
| Citation | Neelam Pahwa, A.D. Yadav, S.K. Dubey, A.P. Patel, J. Nano- Electron. Phys. 3 No1, 414 (2011) |
| DOI | |
| PACS Number(s) | 61.72.uj, 61.80Jh, 61.82.Fk, 64.70kg, 268.35bg, 68.55Nq, 68.90 + g, 78.30. – j, 78.30.Fs, 78.40. – q, 78.40Fq |
| Keywords | CdTe (15) , Thin films (60) , Swift heavy ion irradiation (3) , Micro-Raman (3) , U V. |
| Annotation | CdTe thin films grown by thermal evaporation on quartz substrates were irradiated with Swift (100 MeV) Ni 4 + ions for fluences in the range 1.0 × 1011 - 1.0 × 1013 cm – 2. The modification in the structure and optical properties has been studied as a function of ion fluence using Micro-Raman spectroscopy and UV-VIS spectroscopy. In Micro Raman spectrum, weak LO and TO modes of CdTe and A1 & E modes of Te were observed with blue shift which was found to increase with increase in fluence. Intensity of these modes decreased with increase in ion fluence. UV-transmission showed pronounced interference fringes, indicating a good quality of the films. The bandgap was found to increase in the range 1.4-1.75 eV with increase in fluence. |
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List of References |
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