Electrophysical Properties of Ge/Cr Thin Films
| Authors | M.S. Desai1 , L.V. Odnodvorets2 , C.J. Panchal1 , I.Yu. Protsenko2 , N.I. Shumakova2, D.V. Velykodnyi2 |
| Affiliations | 1 Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, VADODARA-390 001, Gujarat, India 2 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine |
| Е-mail | msd_msu@yahoo.com, protsenko@aph.sumdu.edu.ua |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, published online 08 May 2011 |
| Citation | M.S. Desai, L.V. Odnodvorets, C.J. Panchal, et al., J. Nano- Electron. Phys. 3 No1, 232 (2011) |
| DOI | |
| PACS Number(s) | 73.61 Jc, 71.35. – y, 73.50. – h |
| Keywords | Cr (184) , Ge (216) , Two-layer film, Conductivity (43) , Electrophysical properties, Exciton of Wannier-Mott. |
| Annotation |
Electrophysical properties of the two-layer film systems based on Ge and Cr as two-layer film a-Ge/Cr/S or over Ge/Cr/S are studied. It is found that at a limited thickness of dGe ≈ 10-15 nm there is an inversion of sign value of ΔR/R = [R(Ge/Cr) – R(Cr)]/R(Cr) from ΔR/R < 0 (for dGe ≈ 10-15 nm) to ΔR/R > 0 (for dGe ≈ 10-15 nm). This result is explained by the formation of excitons of Wannier-Mott type that leads to a decrease in the concentration of free-carriers and, as a result of it, to the increase in the value of ΔR/R. |
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List of References |
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