Authors | C.J. Panchal1 , A.S. Opanasyuk2 , V.V. Kosyak2, M.S. Desai1 , I.Yu. Protsenko2 |
Affiliations | 1 M.S. University of Baroda, Applied Physics Department, Faculty of Technology and Engineering, Vadodara, 390001, Gujarat, India 2 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine |
Е-mail | cjpanchal_msu@yahoo.com, opanasyuk_sumdu@ukr.net, protsenko@aph.sumdu.edu.ua |
Issue | Volume 3, Year 2011, Number 1, Part 2 |
Dates | Received 04 February 2011, in final form 27 April 2011, published online 08 May 2011 |
Citation | C.J. Panchal, A.S. Opanasyuk, V.V. Kosyak, et al., J. Nano- Electron. Phys. 3 No1, 274 (2011) |
DOI | |
PACS Number(s) | 61.05.cp, 68.37.Hk, 73.40.Lg, 73.61.G |
Keywords | Physical properties (5) , Defects (12) , Zinc and cadmium chalcogenides films, Crystal structure (8) , Substructure (2) . |
Annotation |
In this paper, the structural properties of the zinc and cadmium chalcogenide thin films are considered. The influence of the structural defects such as grain boundaries, dislocations, native point defects, etc., on the optical and electrical properties of the thin films was studied. The methods of the II-VI thin films deposition are described. The influence on the sub-structural properties (phase compositions, texture, grain size, stacking faults concentration, micro deformation levels, and coherent domain size) of the thin films grown by the close-spaced vacuum evaporation method was analyzed. The growth conditions of the thin films with optimized parameters have been determined. |
List of References |