Optical Band Gap Study of Bi1-xSbx (x = 0.10, 0.15 & 0.20) Thin Films
| Authors | C.F. Desai, P.H. Soni, M.P. Jani |
| Affiliations | Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara-390 002, India |
| Е-mail | phsoni_msu@yahoo.com |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, in final form 30 April 2011, published online 08 May 2011 |
| Citation | C.F. Desai, P.H. Soni, M.P. Jani, J. Nano- Electron. Phys. 3 No1, 313 (2011) |
| DOI | |
| PACS Number(s) | 78.20.Ci, 81.15.Ef |
| Keywords | Absorbance (2) , Band Gap (29) , Film thickness, Size effect (6) . |
| Annotation |
The solid-liquid interface of Bi1 – xSbx crystal growth is very favorable for investigations of electron- phonon phenomena. Bismuth is a semimetal with high electron and hole mobilities. When Bi is doped with Sb in the range of 7 to 22 atomic percentage, it undergoes semimetal-semiconductor transition. Interest in Bi-Sb materials system has recently been stimulated due to promise of a new generation of thermoelectric materials based on these alloys. The starting materials used in this study, Bi and Sb, were both of 99.999 % purity Bi1 – xSbx. Thin Films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500 cm – 1 to 4000 cm – 1. From the optical absorption data the band gap has been evaluated and the results indicate absorption through direct interband transition. The absorption spectra were obtained for films of various thicknesses. The band gap was found to increase with decreasing thickness, the dependence being inverse of square of thickness. The effect is most pronounced for thicknesses below 150 nm and is indicative of the quantum size effect. The estimate of the de Broglie wavelength of the carriers confirms this. The detailed results have been reported. |
|
List of References |
Other articles from this number
1) Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films [0225-0231]2) Electrophysical Properties of Ge/Cr Thin Films [0232-0235]
3) Double Acceptor Interaction in Semimagnetic Quantum Dot [0236-0239]
4) Elastic Constants and Its Pressure Derivative of Boron Phosphide Using Higher-Order Perturbation Theory [0240-0242]
5) Review of MEMS Test Structures for Mechanical Parameter Extraction [0243-0253]
6) Synthesis, Structural and Optical Study of CdS Nanoparticles Doped With Different Concentration of Cu [0254-0259]
7) Effect of Annealing on Structural, Optical and Electrical Behaviours of WO3 Thin Films Prepaired by Physical Vapour Deposition Method [0260-0267]
8) Electronic Structure and Magnetic Properties of Cobalt Doped Zinc Oxide [0268-0273]
9) Structural and Substructural Properties of the Zinc and Cadmium Chalcogenides Thin Films (a Review) [0274-0301]
10) Structural Investigation of Sbgese Glasses by High Resolution X-Ray Photoelectron Spectroscopy [0302-0307]
11) Thermal and Dielectric Studies on Ge10Se69Tl21 Chalcogenide Glass [0308-0312]
12) Comparison of Thermal Evaporation and Plasma Assisted Thermal Evaporation Processes for Deposition of tin Oxide Thin Films [0318-0322]
13) Correlation of Raman and Photoluminescence Spectra of Al2O3 Capped Silicon Nanoparticles Grown by Reactive Pulsed Laser Deposition [0323-0329]
14) Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor [0330-0340]
15) Electronic Properties of Tin Telluride: a First Principles Study [0341-0347]
16) Analysis of High Energy Ion, Proton and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz Sige HBTS [0348-0357]
17) Field-Emission Study of Multi-Walled Carbon Nanotubes Grown on Si Substrate by Low Pressure Chemical Vapor Deposition [0358-0361]
18) Optical and Electrochromic Properties of E-Beam Evaporated Nickel Oxide Thin Film [0362-0369]
19) Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at low Power Plasma [0370-0375]
20) P-Type Transparent nio Thin Films by E-Beam Evaporation Techniques [0376-0383]
21) Excited States of a Magnetic Polaron in a Quantum Well [0383-0387]
22) Temperature Induced Stress Dependent Photoluminescence Properties of Nanocrystallite Zinc Oxide [0388-0395]
23) Magnetic, Electrical and Surface Morphological Characterization of AuGe/Ni/Au Ohmic Contact Metallization on GaAs/AlGaAs Multilayer Structures [0396-0403]
24) Thermal and Optical Study of Te15(Se100-xBix)85 (x = 0, 1, 3) Chalcogenide Glasses [0404-0408]
25) Zinc Oxide Nanostructures by Oxidation of Zinc Films Deposited on Oxidized Silicon Substrate [0409-0413]
26) Micro-Raman and UV-Vis Studies of 100 MEv Ni4+ Irradiated Cadmium Telluride Thin Films [0414-0417]
27) The Silicon-to-Silicon Anodic Bonding Using Sputter Deposited Intermediate Glass Layer [0418-0425]
28) low Temperature Effects on Electrical and Optical Properties of Vacuum Annealed Zinc Tetra- Tert- Butyl 2, 3 Naphthalocyanine Thinfilms [0426-0432]
29) Effect of Additives on Grain Size and Ammonia Sensing Properties of Sprayed Pure and CuO Modified ZnO Thin Films [0433-0440]
