Use of the Porous A3B5 Compounds for Supercapacitor Electrodes
| Authors | А.F. Dyadenchuk , V.V. Kidalov |
| Affiliations | Berdyansk State Pedagogical University, 4, Shmydta, 71100 Berdyansk, Ukraine |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 1 |
| Dates | Received 15 October 2014; revised manuscript received 05 March 2015; published online 25 March 2015 |
| Citation | А.F. Dyadenchuk, V.V. Kidalov, J. Nano- Electron. Phys. 7 No 1, 01021 (2015) |
| DOI | |
| PACS Number(s) | 61.43Gt, 81.65.Cf, 84.60. – h |
| Keywords | Supercapacitor (3) , Electrochemical etching of semiconductors, Capacitance (8) . |
| Annotation | Use of GaAs and GaP porous plates is proposed as a replacement of activated carbon electrodes for supercapacitors. Porous electrodes are prepared by electrochemical etching. Description of the production technique of supercapacitors based on porous semiconductors A3B5 is presented. Area of the porous surface is defined by gas adsorption method. The method for calculation of supercapacitor capacitance created on GaAs and GaP porous plates is described. |
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List of References English version of article |
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