Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors
| Authors | V.N. Murashev , M.P. Konovalov, S.A. Legotin , S.I. Didenko , O.I. Rabinovich , A.A. Krasnov , K.A. Кuzmina |
| Affiliations | National University of Science and Technology 'MISiS' “Moscow Institute of Steel and Alloys”, 4, Leninskiy prosp., 119040 Moscow, Russian Federation |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 1 |
| Dates | Received 15 October 2014; revised manuscript received 16 January 2015; published online 25 March 2015 |
| Citation | V.N. Murashev, M.P. Konovalov, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 1, 01011 (2015) |
| DOI | |
| PACS Number(s) | 00.05.Tp, 85.60.Jb |
| Keywords | IGBT-transistors, Irradiation (10) , Systems (5) , Radioisotope (4) . |
| Annotation | The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed. |
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List of References |
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