Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT
| Authors | Palash Das, Dhrubes Biswas |
| Affiliations | Indian Institute of Technology Kharagpur, Kharagpur, India |
| Е-mail | d.palash@gmail.com |
| Issue | Volume 7, Year 2015, Number 1 |
| Dates | Received 12 December 2014; published online 25 March 2015 |
| Citation | Palash Das, Dhrubes Biswas, J. Nano- Electron. Phys. 7 No 1, 01006 (2015) |
| DOI | |
| PACS Number(s) | 73.21.Fg, 81.05.Ea, 85.30.Tv |
| Keywords | AlGaN / GaN (2) , Modeling (20) , Threshold voltage (15) , Linearity. |
| Annotation | In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in large signal applications has been presented in terms of quantized energy levels in the quantum well. The dependence of threshold voltage and linear operable gate voltage range on a newly introduced parameter named “Surface Factor” is analyzed as well. |
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List of References |
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