Electrophysical Properties of Nanocrysyalline Platinum Thin Films

Authors K.V. Tyschenko , I.M. Pazukha , Т.M. Shabelnyk, I.Yu. Protsenko

Sumy State University, 2, Rymsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail protsenko@aph.sumdu.edu.ua
Issue Volume 5, Year 2013, Number 1
Dates Received 08 February 2013; revised manuscript received 19 March 2013; published online 28 March 2013
Citation K.V. Tyschenko, I.M. Pazukha, Т.M. Shabelnyk, I.Yu. Protsenko, J. Nano- Electron. Phys. 5 No 1, 01029 (2013)
PACS Number(s) 68.60Dv, 62.60F, 72.10. – d
Keywords Thin film Pt, Structure and phase state, Temperature coefficient of resistance, Strain coefficient, Parameters of electron scattering.
The results of research structural and phase state, termoresistive properties (resistivity, temperature coefficient of resistance (TCR)) in the range of temperature ΔТа = 300-630 К and tensoresistive properties (gauge factor) in the range of deformation Δεl1 = (0-1) %, Δεl2 = (0-2) % were presented. Thin films Pt have fcc structure with lattice parameter ā = 0,390 nm after condensation and annealing. The temperature dependences characterized by relatively large value of resistivity (ρ ~ 10 – 7 Ohm·m) and relatively small value of TCR (β ~ 10 – 4– 1) respectively. Strain properties characterized by a wide interval of elastic deformation (more than 1 %). The deformation coefficient of electron mean free path (λ0) ηλ0l ≈ 9 and changing electron mean free path Δλ0 ≈ = 2 nm were calculated.

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