Transformations in Submonolayer Coverages of Chromium and Titanium on Si (001) Surface

Authors K.O. Butariev, I.F. Koval, Yu.A. Len , M.G. Nakhodkin
Affiliations

Taras Shevchenko National University of Kyiv, 64, Volodymyrs'ka Str., 01601 Kyiv, Ukraine

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 1
Dates Received 15 November 2012; published online 28 March 2013
Citation K.O. Butariev, I.F. Koval, Yu.A. Len, M.G. Nakhodkin, J. Nano- Electron. Phys. 5 No 1, 01025 (2013)
DOI
PACS Number(s) 68.55. – a, 71.20.Be, 82.80.Pv, 81.16.Pr
Keywords Transition metal (3) , Silicide, Oxidation (4) , Silicon (58) .
Annotation In this article the structure Si (001) surface covered by the pre-adsorbed (~ 1-3 nm) of Ti and Cr at room temperature after annealing at 450 °C was studied. It was found that after annealing on silicon surface formed island coverage. The investigation of stoichiometry shows that island’s composed of disilicide structure.

List of References

English version of article