Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density

Authors Fateh Singh Gill1, Himanshu Gupta2, L.P. Purohit2, Pankaj K. Pal , Kiran Sharma1, Neeraj Dhiman1, R. Kumar2, R.M. Mehra3
Affiliations

1 Graphic Era University, Clement Town, Dehradun, India

2 Department of Physics, Gurukula Kangri University, 249401 Haridwar, India

3 School of Engineering & Technology, Sharda University, 201306 Greater Noida, India

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 1
Dates Received 30 December 2012; published online 28 March 2013
Citation Fateh Singh Gill, Himanshu Gupta, L.P. Purohit, et al., J. Nano- Electron. Phys. 5 No 1, 01019 (2013)
DOI
PACS Number(s) 78.55.Mb, 81.07.Ta, 61.46.Df
Keywords Photoluminescence (17) , Quantum dots (3) , Nanoparticles (70) .
Annotation The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of sphe-rical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model.

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