Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys

Authors L.P. Purohit1, H. Gupta1, Pankaj K. Pal1, A. Kumar2, R. Kumar1, R.M. Mehra3

1 Department of Physics, Gurukula Kangri University, 249404 Haridwar, India

2 Department of Mathematics & Statistics, Gurukula Kangri University, 249404 Haridwar, India

3 School of Engineering & Technology, Sharda University, Greater Noida, India

Е-mail lppurohit@gmail.com
Issue Volume 5, Year 2013, Number 1
Dates Received 30 December 2012; published online 28 March 2013
Citation L.P. Purohit, H. Gupta, Pankaj K. Pal, et al., J. Nano- Electron. Phys. 5 No 1, 01020 (2013)
PACS Number(s) 71.55 Jv, 71.55. Jv, 81.05. Gc, 81.40 Tv
Keywords a-Si (4) , H thin films; Doping concentrations, Annealing temperatures, Transmittance (7) , Optical constants (10) .
Annotation S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperature were examined by means of optical transmission spectra of the films in the wavelength range 300-1100 nm. Dispersion in optical constants such as transmittance, bandgap and refractive index were observed. Tailoring in optical constants was observed with respect to doping concentrations as well as the annealing temperatures.

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