Optimization of Various Physical Properties of a CsPbI3 – XBrX (X = 0, 1)-Based Perovskite Solar Cell
| Authors | Kunal Chakraborty1 , R. Narmadha2 , Islom Kadirov3, Visalakshi Narapareddi4, M. Lakshmu Naidu5, Karedla Chitambara Rao6 |
| Affiliations |
1Department of Electrical Engineering, IMPS College of Engineering and Technology, Malda, West Bengal, India 2Department of Mechatronics, Sathyabama Institute of Science and Technology, Chennai, Tamil Nadu, India 3Department of Transport Systems, Urgench State University, Urgench, Uzbekistan 4School of Business, Aditya University, Aditya Nagar, ADB Rd, 533437 Surampalem, Andhra Pradesh, India 5Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, 522302 Guntur, Andhra Pradesh, India 6Department of Electronics and Communication Engineering, Aditya Institute of Technology and Management, 532203 Tekkali, Andra Pradesh, India |
| Е-mail | kunal.eiilm.vu@gmail.com |
| Issue | Volume 18, Year 2026, Number 3 |
| Dates | Received 27 February 2026; revised manuscript received 21 June 2026; published online 26 June 2026 |
| Citation | Kunal Chakraborty, R. Narmadha, et al., J. Nano- Electron. Phys. 18 No 3, 03025 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(3).03025 |
| PACS Number(s) | 88.40.jm, 88.40.H – |
| Keywords | CsPbI3, CsPbI2Br, Perovskite (6) , SCAPS-1D (24) , Thickness (13) , PCE (9) . |
| Annotation |
Perovskite solar cells are the most promising alternative sources of clean energy. In this re-search work, a regular Cs-based halide (CsPbI3) and mixed halide (CsPbI2Br) PSC were developed to study the thickness, device temperature, and material defect density using the SCAPS-1D simulator under an ideal 27 °C ambient temperature. In this device model, TiO2 and CuSCN are used as ETL (electron transport layer) and HTL (hole transport layer), and FTO and Ag are used as front and back electrodes, respectively. The structure of the device is the n-i-p type FTO/TiO2/CsPbI3/CuSCN/Ag and FTO/TiO2/CsPbI2Br/CuSCN/Ag-based halide and mixed halide model. The optimized thickness of the halide (CsPbI3) and mixed halide (CsPbI2Br)-based PSC is 500 nm. The optimal conversion efficiency for the FTO/TiO2/CsPbI3/CuSCN/Ag and FTO/TiO2/CsPbI2Br/CuSCN/Ag-based halide and mixed halide PSC is 11.07 % and 10.89 %, respectively. The VOC of the halide (CsPbI3) and mixed halide (CsPbI2Br)-based PSC at maximum power point is 1.21 V and 0.84 V. The optimal device temperature and material defect density for the halide (CsPbI3) and mixed halide (CsPbI2Br)-based PSC are 30 °C and 1012 cm – 3, respectively. |
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List of References |
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