Development of a Gigahertz-Range Microstrip Sensor for Monitoring the Doping of Semiconductor Structures
| Authors | R.S. Chykun, I.M. Bondarenko, O.V. Hlukhov, V.A. Chekubasheva |
| Affiliations |
Kharkiv National University of Radio Electronics, 61166 Kharkiv, Ukraine |
| Е-mail | roman.chykun@nure.ua |
| Issue | Volume 18, Year 2026, Number 3 |
| Dates | Received 15 March 2026; revised manuscript received 21 June 2026; published online 26 June 2026 |
| Citation | R.S. Chykun, I.M. Bondarenko, O.V. Hlukhov, V.A. Chekubasheva, J. Nano- Electron. Phys. 18 No 3, 03013 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(3).03013 |
| PACS Number(s) | 84.40. – x, 07.57.kp |
| Keywords | Microstrip lines, Dielectric permittivity, Doped semiconductors, Slot structures, Resonance (8) , Dielectric substrates. |
| Annotation |
The work presents the concept of a microstrip resonant sensor designed for non-destructive monitoring of dopant concentration in semiconductor structures. The sensor architecture is based on two coupled microstrip lines with a localized electric field in a narrow slot, which ensures high sensitivity to variations in effective permittivity and intrinsic material losses. A full-wave simulation was performed in Ansys HFSS to analyze the device operation, accurately reproducing the actual geometry and physical parameters of the sensor, the properties of the Rogers RO3003 substrate, and the characteristics of the inserted sample.Three slot-filling conditions were investigated: air, monocrystalline silicon, and doped silicon with an in-creased concentration of free carriers. It is shown that introducing silicon shifts the resonance frequency to-ward lower values due to the increased effective permittivity, while doping further reduces the quality factor and broadens the |S₁₂| (|S₂₁|) resonance dip as a result of higher electromagnetic losses. The obtained S-parameter responses confirm the capability of the sensor to distinguish materials with closely spaced parameters and to determine the doping level based on frequency shift and quality-factor degradation. The proposed structure demonstrates high sensitivity and reproducibility and can be employed for rapid non-destructive testing of silicon materials in the gigahertz range as well as for further integration into mass production. |
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