CoFe2O4/InSe Heterostructures Based on Layered Crystals: Electrical and Photoelectric Properties

Authors I.G. Tkachuk1,3, I.G. Orletskii2 , V.B. Boledzuk1 , V.I. Ivanov1 , M.V. Tovarnitskii1, E.G. Makhrova3
Affiliations

1Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, 58001 Chernivtsi, Ukraine

2Yuriy Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine

3Bukovinian State Medical University, 58001 Chernivtsi, Ukraine

Е-mail ivan.tkachuk.1993@gmail.com
Issue Volume 18, Year 2026, Number 3
Dates Received 23 February 2026; revised manuscript received 19 June 2026; published online 26 June 2026
Citation I.G. Tkachuk, I.G. Orletskii, et al., J. Nano- Electron. Phys. 18 No 3, 03001 (2026)
DOI https://doi.org/10.21272/jnep.18(3).03001
PACS Number(s) 73.40. – c, 78.66. – w
Keywords Indium Selenide, Heterostructures (2) , Spray Pyrolysis (9) , I-V Characteristics (2) , Photosensitivity.
Annotation

The electrical and photoelectric properties of an n-CoFe2O4/p-InSe anisotype heterojunction formed on the basis of thin films of cobalt ferrite and a layered indium selenide have been investigated. CoFe2O4 films were obtained by the spray pyrolysis method. The p-InSe substrates were fabricated from single crystals grown by the Bridgman method. The I-V characteristics of the heterostructures were measured in the temperature range of 244 ÷ 317 K. The potential barrier height was evaluated. The influence of series resistance on the shape of the forward I-V characteristics was analyzed, and the main factors determining it were identified. Based on the analysis of experimental dependences, the charge transport mechanisms through the heterojunction under forward and reverse bias were studied. The experimental data were approximated within the framework of appropriate theoretical models. The main regularities governing the formation of the spectral response in the photon energy range of 1.2 ÷ 3.2 eV were established. The obtained results can be used in the development of electronic devices based on heterostructures of this type.

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