| Authors | I.S. Virt1, N.V. Barchuk1, P. Potera2, M.V. Chekailo3 |
| Affiliations |
1Drohobych Ivan Franko State Pedagogical University, 82100 Drohobych, Ukraine 2University of Rzeszow, 35-310 Rzeszow, Poland 3Lviv Polytechnic National University, 79000 Lviv, Ukraine |
| Е-mail | isvirt@dspu.edu.ua |
| Issue | Volume 18, Year 2026, Number 3 |
| Dates | Received 13 April 2026; revised manuscript received 19 June 2026; published online 26 June 2026 |
| Citation | I.S. Virt, N.V. Barchuk, et al., J. Nano- Electron. Phys. 18 No 3, 03003 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(3).03003 |
| PACS Number(s) | 61.80.Ba, 61.82.Fk, 71.55.Gs |
| Keywords | Zinc oxide (10) , Thin films (60) , Photonic annealing, Surface morphology (2) , Electrophysical properties, Photovoltaic (13) , Optical characteristics. |
| Annotation |
This study investigates the physical properties of nickel-doped zinc oxide (NZO) thin films fabricated via pulsed laser deposition (PLD) on both rigid and flexible substrates. Post-growth modification was performed using ultraviolet (UV) photonic annealing, and the impact of processing conditions on the microstructural, electrical, and optical properties of the resulting NZO nanostructures was systematically evaluated. Our findings demonstrate that photonic annealing induces significant crystalline transformations throughout the bulk and surface of the films. Optimal irradiance levels were identified at 20 kJ/cm2 for rigid substrates and 36 kJ/cm2 for flexible ones, enabling the fabrication of nanostructured surfaces with tailored characteristics. The ability to modulate these properties by adjusting photon flux and exposure time highlights UV annealing as a viable low-temperature technique for flexible electronics. Furthermore, the observed reduction in oxygen-related defects correlates with the measured optoelectronic behavior, validating established models for ZnO defect chemistry. These results provide a robust foundation for the development of high-performance flexible photosensors and compatible bioelectronic devices. |
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