Modern CAD Tools for Single-Electron Nanodevices
| Authors | O.S. Melnyk, O.O. Nahaichenko |
| Affiliations |
National University "Kyiv Aviation Institute", 03058 Kyiv, Ukraine |
| Е-mail | oleksandr.melnyk@npp.kai.edu.ua |
| Issue | Volume 18, Year 2026, Number 3 |
| Dates | Received 02 April 2026; revised manuscript received 19 June 2026; published online 26 June 2026 |
| Citation | O.S. Melnyk, O.O. Nahaichenko, J. Nano- Electron. Phys. 18 No 3, 03012 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(3).03012 |
| PACS Number(s) | 85.35.Be, 85.35.Gv |
| Keywords | Single-electron nanoelectronics, Computer-aided design, Cryogenic temperature, Energy dissipation, Defect tolerance of nanocircuits. |
| Annotation |
This paper presents an analysis of the results obtained in the computer-aided design of nanodevices based on quantum-dot cellular automata using modern single-electronics CAD tools such as QCADesigner, QCADesigner-E, and QCADesigner-FS. Using a nanomultiplexer circuit as a case study, functional, temperature-dependent, thermo-energy, and probabilistic defect-oriented simulations were performed. It is shown that modern CAD suites make it possible not only to synthesize the topology of a nanocircuit, but also to comprehensively evaluate its operability, energy efficiency, and resistance to structural defects. It was ultimately іestablished that the investigated nanomultiplexer correctly implements the signal-selection function; however, it remains operable only within a limited cryogenic temperature range. The energy analysis revealed a periodic behavior of the dissipation components associated with the clocking phases, whereas QCADesigner-FS simulation confirmed a significant dependence of the error probability on four types of process-induced defects, the fault level, and the topological placement of cells. The most vulnerable elements were found to be the functionally critical nodes associated with signal injection, control, and output formation. |
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