Comparison Between Silicon (Si) and Gallium Arsenide (GaAs) Using MATLAB

Authors Abdelkrim Mostefai1,2

1Department of Electronics, Faculty of Electrical Engineering, University of Sidi Bel Abbes, Algeria

2Department of Electronics, Faculty of Technology, University of Saida, Algeria

Issue Volume 14, Year 2022, Number 4
Dates Received 17 June 2022; revised manuscript received 11 August 2022; published online 25 August 2022
Citation Abdelkrim Mostefai, J. Nano- Electron. Phys. 14 No 4, 04028 (2022)
PACS Number(s) 71.20.Mq, 71.20.Nr
Keywords Silicon (Si), Gallium arsenide (GaAs), Energy bands, Crystal structures, Semiconductor (62) , MATLAB (6) , Energy band gap Eg.

The basis of operation of modern electronics components – diodes, transistors, etc. – is the ability to control the electrical conductivity of semiconductors by doping, that is, by introducing impurities into the material. Semiconductors doped differently can be brought into contact to create junctions for controlling the direction and quantity of the current flowing through the assembly. Some examples of semiconductors are silicon (Si), germanium (Ge) and gallium arsenide (GaAs). These substances are close to insulators (intrinsic semiconductors), but the addition of a small amount of dopant leads to a strong drop in electrical resistance, turning them into conductors. Depending on the kind of dopant, n-type or p-type semiconductor can be made. Silicon is a critical element for fabricating most electronic circuits. Silicon (Si) is a pure crystalline semiconductor material; it is the well-known and most used material. After silicon (Si), gallium arsenide (GaAs) is the second most common semiconductor used in laser diodes, solar cells, microwave-frequency integrated circuits and others. This paper presents a comparison between the energy band gap Eg as a function of temperature T, energy band gap Eg as a function of doping density and intrinsic carrier density ni of silicon (Si) and gallium arsenide (GaAs) using MATLAB.

List of References