Annealing Effect on the Physical Properties of Chemically Prepared Cu2 – xSe Films

Authors S.R. Gosavi

Material Research Laboratory, C.H.C. Arts, S.G.P. Commerce, and B.B.J.P. Science College, Taloda, Dist. Nandurbar-425413, (M.S.), India

Issue Volume 14, Year 2022, Number 4
Dates Received 05 July 2022; revised manuscript received 14 August 2022; published online 25 August 2022
Citation S.R. Gosavi, J. Nano- Electron. Phys. 14 No 4, 04019 (2022)
PACS Number(s) 68.60. – p, 81.40.Ef, 61.05.C, 68.37.Ps, 71.35.Cc
Keywords Thin films (60) , Annealing (16) , X-ray diffraction (19) , Atomic force microscopy (9) , UV absorption spectra.

In the present work, copper selenide (Cu2 – xSe) thin films were prepared on amorphous glass substrate by chemical bath deposition (CBD) method at room temperature. Cu2 – xSe thin films were further annealed at 473 K, and the effect of annealing on the physical properties of Cu2 – xSe thin films is reported. The structural properties of as-deposited and annealed films were studied by X-ray diffraction (XRD), and XRD analysis revealed that both films are polycrystalline in nature, possessing a cubic structure with (111) preferential orientation. Also, it was observed that the crystallinity of the films increased after annealing. Scanning electron microscopy (SEM) study confirmed that annealing plays a significant role in the nature of the surface morphology of Cu2 – xSe thin film. A surface topographic study was carried out by atomic force microscopy (AFM), which indicates that the surface becomes smoother after annealing. A study of the optical properties from the absorbance spectra revealed that the absorbance in the visible region increases after annealing, resulting in a decrease in the band gap from 2.30 to 2.25 eV. The electrical resistivity of chemically prepared Cu2 – xSe thin films is about 19.32  10 – 4 Ω.cm, which further decreases after annealing.

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