Authors | Fouad Okba1, Rabie Mezouar2 |
Affiliations |
1Architecture Department, Institute of Architecture and Earth Sciences, Ferhat Abbas Setif 1 University, 19000 Setif, Algeria 2Laboratory of Materials and Electronic Systems, Faculty of Sciences and Technology, Bordj Bou Arreridj University, 34000 Bordj Bou Arreridj, Algeria |
Е-mail | fouad.okba@univ-setif.dz |
Issue | Volume 14, Year 2022, Number 4 |
Dates | Received 23 May 2022; revised manuscript received 18 August 2022; published online 25 August 2022 |
Citation | Fouad Okba, Rabie Mezouar, J. Nano- Electron. Phys. 14 No 4, 04004 (2022) |
DOI | https://doi.org/10.21272/jnep.14(4).04004 |
PACS Number(s) | 65.40. – b, 62.50. – p, 64.30.Jk |
Keywords | Calcium chalcogenides, Grüneisen parameter, High pressure, EOS (3) . |
Annotation |
Based on the experimental equations of state (EOS) of the parameters reported in the literature, in the present work, we reproduced the variation in the unit cell volume up to phase transition pressure for calcium-based chalcogenide CaX (X = S, Se, Te) semiconductor materials. We also studied the high-pressure effect on the crystal density, isothermal bulk modulus, the first order pressure derivative of the isothermal bulk modulus, and the Grüneisen parameter for CaX (X = S, Se, Te) binary compounds. It was found that, as the pressure increases, both the crystal density and the isothermal bulk modulus increase, while the first order pressure derivative of the bulk modulus and the Grüneisen parameter decrease gradually for all materials of interest. Similar behaviors of all these parameters against pressure were observed for several materials in the literature. |
List of References |