Driving of The Parameters Of GaAs:Si p-n-Structures by Giratronic Irradiation

Authors G.A. Sukach1, V.V. Kidalov2

1 National University of Life and Environmental Sciences of Ukraine, 15, Heroyiv Oborony str., 03041, Kyiv, Ukraine

2 Berdyansk State Pedagogical University, 4, Shmidta Str., 71100, Berdyansk, Ukraine

Е-mail [email protected]
Issue Volume 3, Year 2011, Number 4
Dates Received 21 April 2011, in final form 25 September 2011, published online 30 December 2011
Citation G.A. Sukach, V.V. Kidalov, J. Nano- Electron. Phys. 3 No4, 99 (2011)
PACS Number(s) 73.20.Hb, 72.80.Ey
Keywords Giratronic irradiation, Light-emitting structure, Impurities, Control the p-n- junction, Thermoelastic stresses.
It is shown that by using giratronic irradiation it is possibility to control the p-n junction in an already fabricated light-emitting structure. Shift compensated field emitting structure based on GaAs:Si, due to the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after giratronic irradiation.

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