Magnetoresistive Properties of Spin-Valve Structures Based on Co and Cu or Au

Authors M.H. Demydenko, S.I. Protsenko , D.M. Kostyuk , I.V. Cheshko
Affiliations Sumy State University, 2, R.-Korsakov Str., 40007, Sumy, Ukraine
Issue Volume 3, Year 2011, Number 4
Dates Received 07 September 2011, in final form 04 October 2011, published online 30 December 2011
Citation M.H. Demydenko, S.I. Protsenko, D.M. Kostyuk, I.V. Cheshko, J. Nano- Electron. Phys. 3 No4, 81 (2011)
PACS Number(s) 75.30.Ds, 75.47.De, 75.30.Gw
Keywords Spin-Valve (2) , MR (14) , Induction of magnetic field, Coercitivity.
Annotation The construction of module for automation measurement of magnetoresistance (MR) and coercitivity force (Вс) in spin-valve structures based on Co and Cu or Au film systems was proposed. The peculiarities of dependences of MR and Bc from angle α between substrate plane and direction of external magnetic field induction were studied. The abrupt changes of MR and Вс in the range α = 70° − 90° were determined. The dependence character of MR from α describes as a level of solution of atoms of bottom ferromagnetic layer Co(3 nm) or Co(20 nm) in layer Cu(6 nm) as long as atoms Co(3 nm) have a practically full solution but Co(20 nm) – only limited solution. In this case magnetization of magnet layers of Co(20) and solid solution (s. s.) [Cu, Co(3 nm)] and layers of [Co(20 nm-x)] + s.s.[Cu, Co(x)] realize in different ways. This fact is cause of increase or decrease of MR.

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