Sulfide Passivation of Indium Phosphide Porous Surfaces

Authors Y.O. Suchikova
Affiliations

Berdyansk State Pedagogical University, 4, Schmidt st., 71100 Berdyansk, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 1
Dates Received 02 November 2016; published online 20 February 2017
Citation Y.O. Suchikova, J. Nano- Electron. Phys. 9 No 1, 01006 (2017)
DOI 10.21272/jnep.9(1).01006
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Keywords Porous indium phosphide, Passivation, Chalcogenides (2) , Photoluminescence (17) , Sulfate solution, Oxides (5) .
Annotation The paper describes the effect of the chemical treatment of porous indium phosphide in sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding samples leads to a state of inertia with respect to oxygen. It is found that the thin crystal film is formed of a chemically inert material during chalcogenide passivation por-InP removes oxide layer instead.

List of References

English version of article