Effect of the Growth Conditions of Cadmium Telluride Crystals with OverstoichiometricCadmium on their Electro-Physical Properties

Authors P.M. Fochuk1, E.S. Nykonyuk2, Z.I. Zakharuk1, A.I. Rarenko1, A.S. Opanasyuk3 , M.O. Kovaletz2, V.Ya. Levshenyuk2,
Affiliations

1 National University of Water Management and Nature Resources, 11, Soborna St., 33028 Rivne, Ukraine

2 Chernivtsi National University, 2, Kotsyubynskogo St., 58012 Chernivtsi, Ukraine

3 Sumy State University, 2, Rimsky-Korsakov St., 40007 Sumy, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 1
Dates Received 02 November 2016; revised manuscript received 07 February 2017; published online 20 February 2017
Citation P.M. Fochuk, E.S. Nykonyuk, Z.I. Zakharuk, et al., J. Nano- Electron. Phys. 9 No 1, 01007 (2017)
DOI 10.21272/jnep.9(1).01007
PACS Number(s) 71.55.Gs, 72.20.Jv, 81.10.Fq
Keywords Cadmium telluride (2) , Stoichiometry (2) , Annealing (16) , Electrico-physical properties, Inclusions of another phase.
Annotation It has been shown that the electro-physical characteristics of cadmium telluride crystals with overstoichiometric cadmium, grown by Bridgman, are determined by melt pre-growth temperature. In the case of small melt overheat (ΔT  15 K) there were obtained the p-type crystals with a wide range of electrical parameters: the concentration of holes р  (1010  1016) cm – 3 and mobility р  (10  70) cm2/(Vs) at 300 K. If the melt was pre-overheated greatly (ΔT ≈ 40  65 К), the homogeneous n-type crystals were grown, for which n  (1014  1015) cm – 3 and n  (500  1110) сm2/(Vs) at 300 K. The n-type crystals heated to 720 K were stable, at the same time, in the p-type crystals under heating to Т  370 K there were observed the relaxation processes of hysteresis type.

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