Thermodynamic Properties of Monocrystals of Silicon Doped Boron Impurity

Authors O.V. Panchenko
Affiliations

Zarorizhzhya State Engineering Academy, 226, Soborny ave., 69006 Zaporizhzhya, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 1
Dates Received 01 September 2016; published online 20 February 2017
Citation O.V. Panchenko, J. Nano- Electron. Phys. 9 No 1, 01019 (2017)
DOI 10.21272/jnep.9(1).01019
PACS Number(s) 61.72.sd, 64.70.kg, 65.40.gd
Keywords Monocrystals of silicon, Configuration entropy, Gibbs energy, Parameter of complexformation, Impurity of boron.
Annotation The results of calculations of thermodynamic probability, number of ways of mixture of two components SiB at different levels doped boron are found. Dependences of configuration entropy from a degree doped atoms of an impurity B and configuration entropy from a degree doped atoms of an impurity in view of complex formation are presented in the work. The results of calculations of Gibbs energy are found. The work aims to determine the effect of the formation of complexes of boron on the internal energy of the crystal as a whole, to discover and deepen the idea of the formation of complexes of boron impurities in silicon monocrystals.

List of References

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