Effect of Uniaxial Pressure on the 2-Conductivity of Heavily Doped p-Si(B)

Authors L.I. Panasjuk1, V.V. Kolomoets2, V.M. Ermakov2, S.А. Fedosov3
Affiliations

1 Lutsk National Technical University, 75, Lvivska St., 43018 Lutsk, Ukraine

2 V. E. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, 41, Nauky Ave., 03028 Kyiv, Ukraine

3 Lesya Ukrainka Eastern European National University, 13, Volya Ave., 43025 Lutsk, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 1
Dates Received 13 December 2016; revised manuscript received 08 February 2017; published online 20 February 2017
Citation L.I. Panasjuk, V.V. Kolomoets, V.M. Ermakov, S.А. Fedosov, J. Nano- Electron. Phys. 9 No 1, 01020 (2017)
DOI 10.21272/jnep.9(1).01020
PACS Number(s) 72.20.Fr
Keywords Crystal (51) , Impurity conductivity, Anisotropy (3) , Uniaxial pressure, Tensoresistive effect, Crystallographic direction.
Annotation The paper presents the results of research tensoresistive effect in strongly deformed weakisolator p - Si(B) crystals in the range of σ2-conductivity for the main crystallographic directions , and . The work aims to investigate the influence of strong uniaxial pressure on impurity σ2-conductivity in p-Si(B) crystals with a concentration of impurities, which is close to the critical concentration of metal-insulator transition and to establish mechanisms for the studied effects. It was found that non-monotonic dependence of the longitudinal tensoresistive effect for the main crystallographic orientations and their anisotropy defined by a change in the effective mass of the heavy holes with the pressure caused by the relevant laws of the restructuring of the energy spectrum of the valence band by removing the degeneracy of the bands of heavy and light holes under uniaxial pressure.

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